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Transistors
2SA1018
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1473 Features
0.70.1
0.70.2
Unit: mm
5.00.2 4.00.2
* High collector-emitter voltage (Base open) VCEO
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -250 -200 -5 -70 -100 750 150 -55 to +150 Unit V V V mA mA mW C C
0.45+0.15 -0.1 2.5+0.6 -0.2 1 23
2.30.2
12.90.5
5.10.2
0.45+0.15 -0.1 2.5+0.6 -0.2
1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cut-off current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO ICEO hFE VCE(sat) fT Cob Conditions IC = -100 A, IB = 0 IE = -1 A, IC = 0 VCE = -120 V, IB = 0 VCE = -10 V, IC = -5 mA IC = -50 mA, IB = -5 mA VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -10 V, IE =0, f = 1 MHz 50 10 60 Min -200 -5 -1 220 -1.5 Typ Max Unit V V A V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 150 R 100 to 220
Publication date: January 2003
SJC00008BED
1
2SA1018
PC Ta
1 000
-100
IC VCE
Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA -60 - 0.7 mA - 0.6 mA -40 - 0.5 mA - 0.4 mA -20 - 0.3 mA - 0.2 mA - 0.1 mA -120
IC VBE
VCE = -10 V 25C Ta = 75C -25C
Collector power dissipation PC (mW)
800
Collector current IC (mA)
Collector current IC (mA)
-80
-100
-80
600
-60
400
-40
200
-20
0
0
20
40
60
80 100 120 140 160
0
0
-2
-4
-6
-8
-10
-12
0
0
- 0.4
- 0.8
-1.2
-1.6
-2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10 300
hFE IC
VCE = -10 V 120
fT I E
VCB = -10 V Ta = 25C
Forward current transfer ratio hFE
-10
200 Ta = 75C 150 25C 100 -25C
Transition frequency fT (MHz)
-10 -100
250
100
80
-1 25C Ta = 75C -25C
60
40
- 0.1
50
20
- 0.01 - 0.1
-1
-10
-100
0 - 0.1
-1
0 0.1
1
10
100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
20 IE = 0 f = 1 MHz Ta = 25C
10 000
ICEO Ta
VCE = -120 V
16
1 000
12
ICEO (Ta) ICEO (Ta = 25C)
-10 -100
100
8
10
4
0 -1
1
0
40
80
120
160
200
240
Collector-base voltage VCB (V)
Ambient temperature Ta (C)
2
SJC00008BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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